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Tohoku University Technology: Measurement Method for Physical Properties of Soft Thin Films: T06-028

Using ultrasound to measure the density of a polymer film with a thickness of several micrometers.

The present invention is a method for accurately measuring the physical properties of a single soft thin film, such as a thin polymer film with a thickness of several micrometers, by analyzing the amplitude spectrum of ultrasonic echoes and utilizing the acoustic resonance phenomenon that occurs when ultrasonic waves pass through the soft thin film. While conventional methods have allowed for the measurement of the physical properties of thin films tightly adhered to a substrate, it has been difficult to measure a standalone thin film. In this measurement method, the thin film is held by a specially structured jig and evacuated to adhere the thin film to the substrate, completely removing the air layer that would interfere during ultrasonic measurement, thus enabling the measurement of physical properties such as acoustic impedance and density.

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Tohoku University Technology: ZT Measurement of Horizontal Thermoelectric Material Thin Films: T23-041

Thermoelectric power, electrical conductivity, and thermal conductivity can be measured accurately and quickly with a single sample and a single setup.

The calculation of the dimensionless performance index ZT for thermoelectric materials requires the individual measurement of three physical properties: thermoelectric power, electrical conductivity, and thermal conductivity. Currently, this results in a long time needed for the preparation of three types of samples and the measurement of temperature dependence. Additionally, not only the conventional vertical thermoelectric conversion utilizing the Seebeck effect but also the horizontal thermoelectric conversion utilizing the anomalous Nernst effect is gaining attention. However, in the ZT measurement of thin film samples of horizontal thermoelectric materials, it is necessary to prepare different samples for each of the three physical properties, and due to the individual differences in the samples, accurate measurements have been a challenging issue because the interfacial states differ. The present invention relates to a measurement method that achieves the simultaneous measurement of the three physical properties in thin film samples of horizontal thermoelectric materials. Since measurements can be conducted using the same sample and a single setup, it avoids the influence of individual differences in thin film samples and achieves simplification and rapidity in measurement.

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